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[Analysis Case] Stress Evaluation by Raman Mapping

It is possible to confirm the stress distribution in the sample cross-section.

The peaks in the Raman spectrum of single crystal Si shift to higher wavenumbers when compressive stress is applied to the sample and shift to lower wavenumbers when tensile stress is applied. This allows us to gain insights into the stress in Si. An example is shown where the distribution of stress in the cross-section of an IGBT (Insulated Gate Bipolar Transistor) was confirmed using Raman mapping.

• Company：一般財団法人材料科学技術振興財団　MST
• Price：Other

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